• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    This method comprises the steps a) providing a structure (1, 2, 3) comprising a substrate (1) based on crystalline silicon, and having a first surface (10) and a second surface (11) opposite; a first dielectric layer (2) having boron atoms, and being based on a silicon oxynitride; a second dielectric layer (3) formed at the second surface (11) of the substrate (1), and having phosphorus or arsenic atoms; d) applying thermal annealing under an oxidizing atmosphere adapted to form a first semiconductor region (100) by diffusion of the boron atoms; forming a second semiconductor zone (110) by diffusion of the phosphorus or arsenic atoms; enriching the first dielectric layer (2) with oxygen so as to passivate the interface between the first semiconductor region (100) and the first dielectric layer (2).
    公开号:FR3035740A1
    申请号:FR1553834
    申请日:2015-04-28
    公开日:2016-11-04
    发明作者:Thomas Blevin；Raphael Cabal；Bernadette Grange
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] The present invention relates to a method of manufacturing a photovoltaic cell, as well as to a photovoltaic cell. BACKGROUND OF THE INVENTION
    [0002] A method known from the state of the art, in particular from the document "Codiffused bifacial n-type Solar Cells (CoBiN)", P. Rothhardt et al., Energia Procedia, vol. 55, 2014, 287-294, comprises the steps of: a0) providing a semiconductor substrate made of an n-type doped crystalline silicon material, the substrate having a first surface and a second opposing surface, b0) forming a first dielectric layer at the first surface of the substrate, the first dielectric layer having boron atoms, the substrate and the first dielectric layer forming a structure, c0) applying thermal annealing to the structure under an atmosphere containing POCI3 adapted for : diffusing the boron atoms of the first dielectric layer to the first surface of the substrate so as to form a first semiconductor zone, the first semiconductor zone formed by the diffused boron atoms being intended to be in contact with a electrode, 20 - diffuse the phosphorus atoms from the POCI3 to the second surface of the substrate so as to form a second zo semiconductor, the second semiconductor zone formed by the scattered phosphorus atoms being intended to be in contact with an electrode. The first dielectric layer formed in step b) comprises a first underlayer made of a material based on a SiOx silicon oxide and a second underlayer made of a material based on a borosilicate glass ( BSG). The first dielectric layer is formed by chemical vapor deposition at atmospheric pressure. The execution of step c0) is accompanied by the formation of a layer of a phosphosilicate glass (PSG) at the second surface of the substrate. Then, the BSG and the PSG are removed by etching after step c0) with a solution based on hydrofluoric acid. Thus, after etching the BSG and PSG and cleaning the first and second surfaces of the substrate, first and second passivation layers are formed respectively at the first and second surfaces of the substrate. The first passivation layer comprises a first sub-layer of alumina and a second sublayer of silicon nitride SiNX. The second passivation layer comprises a first SiOXNY silicon oxynitride sublayer and a second SiNX silicon nitride sub-layer. Such a method of the state of the art is not entirely satisfactory insofar as it comprises a large number of steps to be performed. In particular, the formation then the suppression of the BSG and the PSG introduce a complexity and a time of non-negligible operation in the implementation of this method. Thus, the present invention aims to remedy in whole or in part the aforementioned drawbacks, and for this purpose concerns a method of manufacturing a photovoltaic cell, comprising the steps of: a) providing a structure comprising: a substrate made of a semiconducting material; crystalline silicon-based conductor, having a first surface and a second opposite surface; a first dielectric layer formed at the first surface of the substrate, and comprising boron atoms, the first dielectric layer being based on a silicon oxynitride SiOXNY which satisfies 0 <y <x, preferably hydrogenated; a second dielectric layer formed at the second surface of the substrate, and comprising phosphorus or arsenic atoms; d) applying thermal annealing to the structure under an oxidizing atmosphere, said thermal annealing being adapted to: - forming a first semiconductor zone intended to be in contact with an electrode, the first semiconductor zone being formed by a diffusion of boron atoms in the substrate from the first dielectric layer to the first surface of the substrate, the first semiconductor region and the first dielectric layer having an interface; forming a second semiconductor zone intended to be in contact with an electrode, the second semiconductor zone being formed by a diffusion of the phosphorus or arsenic atoms in the substrate from the second dielectric layer to the second surface substrate; 3 - enriching the first dielectric layer with oxygen so that the silicon oxynitride SiOXNY satisfies x> 0.50, preferably 0.50 <x <0.66, after step d), so as to passivate the 'interface.
    [0003] "Crystalline" means the multicrystalline form or the monocrystalline form of silicon, thus excluding amorphous silicon. When y = 0, the silicon oxynitride is a silicon oxide. Thus, such a method according to the invention makes it possible to reduce the number of steps to be carried out by virtue of: co-diffusion of the boron and phosphorus or arsenic atoms during step d), an atmosphere oxidizing which provides satisfactory passivation properties for the structure. The silicon oxynitride is preferably hydrogenated to improve the quality of passivation. It is therefore not necessary to etch the first dielectric layer after step d), and then to deposit a dedicated passivation layer, unlike the method of the state of the art. In other words, the first dielectric layer is retained in the process according to the invention.
    [0004] In addition, step d) proceeds continuously; the formation of the first and second semiconductor zones are concomitant. According to one embodiment, the oxidizing atmosphere has a suitable oxygen partial pressure so that the SiOxNy silicon oxynitride of the first dielectric layer satisfies x> 0.50, preferably 0.50 <x <0, 66, after step d). Thus, the applicant has noted a significant improvement in the passivation properties of the structure, in particular at the interface between the first semiconductor zone and the first dielectric layer.
    [0005] Quantitatively, measurements of the transmitter saturation current density, denoted Joe, performed on a structure comprising an n-type doped silicon substrate, each face of which has such a first dielectric layer, give a value of Joe of the order of 120 fA / cm2. In the absence of an oxidizing atmosphere for thermal annealing, the same measurements give a value of Joe greater than 1000 fA / cm 2 (of the order of 1400 fA / cm 2). According to one embodiment, the boron atoms have an atomic proportion in the first dielectric layer of between 10% and 50%, preferably between 10% and 30%, before step d). According to one embodiment, the boron atoms have an atomic proportion in the first dielectric layer of between 1% and 10%, preferably between 3% and 8%, after step d). Thus, such atomic proportions of boron make it possible: to form a first semiconductor zone and thereby a good electrical contact zone, that is to say with a higher surface atomic concentration; at 1019 at./cm3, preferably between 1019 at./cm3 and 3x1020 at./cm3, - maintain a good passivation quality of the first dielectric layer obtained by the oxygen enrichment during step d), a too high atomic proportion of boron affecting the passivation properties.
    [0006] According to one embodiment, the silicon oxynitride SiOxNy verifies x <0.50 before step d). According to one embodiment, the silicon oxynitride SiOxNy satisfies 0 <y <0.10, preferably 0 <y <0.05, before step d), and preferably after step d) . According to one embodiment, the oxidizing atmosphere comprises a mixture of oxygen and a neutral gas selected from argon, nitrogen, or a mixture of argon and nitrogen. Thus, such an oxidizing atmosphere makes it possible to introduce oxygen atoms into the first dielectric layer so that the silicon oxynitride SiOxNy satisfies x> 0.50, preferably 0.50 <x <0.66, after step d). Advantageously, step d) comprises: a first step in which the atmosphere under which the thermal annealing is applied comprises only the neutral gas; a second step during which the oxygen is introduced into the atmosphere.
    [0007] According to one embodiment, the thermal annealing applied in step d) has: an annealing temperature value of between 850 ° C. and 950 ° C., preferably between 900 ° C. and 950 ° C., An annealing time value of between 10 minutes and 1 hour, preferably between 30 minutes and 1 hour. Thus, such a thermal budget allows both: to diffuse the boron atoms to the first surface of the substrate; to diffuse the phosphorus or arsenic atoms to the second surface of the substrate. By "thermal budget" is meant the choice of an annealing temperature value and the choice of a value of annealing time. According to one embodiment, the phosphorus or arsenic atoms have an atomic proportion in the second dielectric layer of between 1% and 10% before step d). According to one embodiment, the phosphorus or arsenic atoms have an atomic proportion in the second dielectric layer of between 1% and 10%, preferably between 1% and 5%, after step d). Of course, the atomic proportion of the phosphorus or arsenic atoms in the second dielectric layer after step d) is less than the atomic proportion before step d).
    [0008] Thus, such atomic proportions of phosphorus or arsenic make it possible both to: form a second semiconductor zone and thereby a good quality contact zone, that is to say with a concentration Atomic atomic density greater than 1020 at./cm3, preferably between 1020 at./cm3 and 1021 at./cm3, - maintain a good passivation quality of the second dielectric layer, an excessively high atomic proportion of phosphorus or phosphorus. arsenic 5 affecting the passivation properties. According to one embodiment, the second dielectric layer is based on a silicon oxynitride SiOxNy satisfying 0 <x <y, preferably hydrogenated. Thus, this material makes it possible to passivate the second surface of the substrate.
    [0009] The silicon oxynitride is preferably hydrogenated to improve the passivation quality. When x = 0, the silicon oxynitride is a silicon nitride. According to one embodiment, the silicon oxynitride SiOXNy of the second dielectric layer satisfies 0 <x <0.05 before and after step d).
    [0010] According to one embodiment, the silicon oxynitride SiOxNy of the second dielectric layer satisfies 0.30 <y <0.55 before and after step d). According to one embodiment, the method comprises the steps of: el) forming a first additional dielectric layer on the first dielectric layer, step e1) being performed after step d), e2) forming a second additional dielectric layer on the second dielectric layer, the first and second additional dielectric layers being each based on a silicon oxynitride SiOxNy satisfying 0 <x <y, preferably hydrogenated. Thus, such additional dielectric layers make it possible both to improve the passivation of the first and second surfaces of the substrate, and to form an optical layer called antireflection of a suitable thickness. The anti-reflective optical layer makes it possible to reduce the optical losses associated with the reflections of the light radiation, and thus to optimize the absorption of the light radiation by the substrate. When x = 0, the silicon oxynitride is a silicon nitride.
    [0011] In addition, step e1) is performed after step d) so that the first dielectric layer can be easily enriched with oxygen in step d) by the oxidizing atmosphere.
    [0012] According to different embodiments, the substrate provided during step a) is doped with n or p type, and the first surface or the second surface of the substrate is intended to be exposed to light radiation. Thus, according to a first embodiment, the substrate provided in step a) is n-doped and the first surface of the substrate is intended to be exposed to light radiation so as to form an emitter architecture. standard. According to a second embodiment, the substrate provided in step a) is n-doped and the second surface of the substrate is intended to be exposed to light radiation so as to form an inverted transmitter architecture. According to a third embodiment, the substrate provided during step a) is p-type doped and the first surface of the substrate is intended to be exposed to light radiation so as to form an inverted transmitter architecture.
    [0013] According to a fourth embodiment, the substrate provided in step a) is p-type doped and the second surface of the substrate is intended to be exposed to light radiation so as to form a standard emitter architecture.
    [0014] The present invention also relates to a photovoltaic cell comprising: - a substrate made of a semiconductor material based on crystalline silicon, and having a first surface and a second opposite surface; first and second semiconductor zones respectively extending under the first surface and under the second surface of the substrate, the first semiconductor zone comprising boron atoms, the second semiconductor zone comprising phosphorus atoms or arsenic; a first layer of a dielectric material formed at the first surface of the substrate, the dielectric material being based on a silicon oxynitride SiOxNy 3035740 8 satisfying 0 <y <x, with x> 0.50, preferably 0, 50 <x <0.66, the dielectric material of the first layer having boron atoms and preferably hydrogen; a second layer of a dielectric material formed at the second surface of the substrate, the dielectric material of the second layer comprising phosphorus or arsenic atoms. Thus, such a photovoltaic cell according to the invention is distinguished from the state of the art by the presence of: a first dielectric layer formed at the first surface of the substrate, made of a material based on silicon oxynitride; , the first dielectric layer comprising boron atoms which have not diffused to the first surface of the substrate, the silicon oxynitride being further enriched with oxygen, which gives it good passivation properties, 15 - d a second dielectric layer formed at the second surface of the substrate, the second dielectric layer having phosphorus or arsenic atoms which have not diffused to the second surface of the substrate. The quantity of boron and phosphorus or arsenic atoms which have not diffused remains sufficient to detect their presence within the corresponding dielectric layer, so that such a photovoltaic cell can be easily detected by reverse engineering. . Advantageously, the silicon oxynitride SiOXNY satisfies 0 <y <0.10, preferably 0 <y <0.05.
    [0015] Advantageously, the boron atoms have an atomic proportion in the dielectric material of the first layer of between 1% and 10%, preferably between 3% and 8%.
    [0016] Advantageously, the dielectric material of the second layer is based on a silicon oxynitride SiOXNY satisfying 0 <x <y, and preferably comprises hydrogen.
    [0017] Advantageously, the silicon oxynitride SiOXNY of the second layer satisfies 0 <x <0.05. Advantageously, the silicon oxynitride SiOXNY of the second layer 5 satisfies 0.30 <y <0.55. Advantageously, the phosphorus or arsenic atoms have an atomic proportion in the dielectric material of the second layer of between 1% and 10%, preferably between 1% and 5%.
    [0018] Advantageously, the photovoltaic cell comprises first and second additional dielectric layers formed respectively on the first and second dielectric layers, and the first and second additional dielectric layers are preferably each based on a silicon oxynitride SiOXNY satisfying 0 <x <y, preferably hydrogenated. Advantageously, the first layer has a thickness of between 3 nm and 100 nm, preferably between 20 nm and 35 nm.
    [0019] According to various embodiments, the substrate is n-type or p-doped, and the first surface or the second surface of the substrate is intended to be exposed to light radiation. Thus, according to a first embodiment, the substrate is n-doped and the first surface of the substrate is to be exposed to light radiation so as to form a standard emitter architecture. According to a second embodiment, the substrate provided is n-type doped and the second surface of the substrate is intended to be exposed to light radiation so as to form an inverted transmitter architecture. According to a third embodiment, the substrate is p-type doped and the first surface of the substrate is intended to be exposed to light radiation so as to form an inverted emitter architecture. According to a fourth embodiment, the substrate is p-type doped and the second surface of the substrate is intended to be exposed to light radiation so as to form a standard emitter architecture.
    [0020] Finally, the present invention relates to a photovoltaic cell capable of being obtained by a method according to the invention.
    [0021] Other characteristics and advantages will become apparent in the following description of various embodiments of a method according to the invention, given by way of non-limiting examples, with reference to the appended drawings in which: FIGS. 1a-1b are diagrammatic cross-sectional views illustrating 10 different steps of a method according to the invention; FIGS. 2 to 5 are schematic sectional views of photovoltaic cells obtained from a method according to the invention; arrows indicating the face of the cell to be exposed to light radiation.
    [0022] For the different modes of implementation, the same references will be used for identical elements or ensuring the same function, for the sake of simplification of the description. The technical characteristics described below for different modes of implementation are to be considered in isolation or in any technically possible combination.
    [0023] The process illustrated in FIGS. 1a to 1g is a method of manufacturing a photovoltaic cell, comprising the steps of: a) providing a structure 1, 2, 3 comprising: a substrate 1 made of a semiconductor material based on silicon crystal, and having a first surface 10 and a second opposite surface 11; a first dielectric layer 2 formed at the first surface 10 of the substrate 1, and comprising boron atoms, the first dielectric layer 2 being based on a silicon oxynitride SiOXNY which satisfies 0 <y <x, preferably hydrogenated; A second dielectric layer 3 formed at the second surface 11 of the substrate 1, and comprising phosphorus or arsenic atoms; d) applying thermal annealing to the structure 1, 2, 3 under an oxidizing atmosphere, said thermal annealing being adapted to: - form a first semiconductor zone 100 intended to be in contact with a electrode E, the first semiconductor zone 100 being formed by a diffusion of the boron atoms in the substrate 1 from the first dielectric layer 2 to the first surface 10 of the substrate 1, the first semiconductor zone 100 and the first dielectric layer 2 having an interface; forming a second semiconductor zone 110 intended to be in contact with an electrode E, the second semiconductor zone 110 being formed by a diffusion of the phosphorus or arsenic atoms in the substrate 1 from the second dielectric layer 3 to the second surface 11 of the substrate 1; enriching the first dielectric layer 2 with oxygen so that the silicon oxynitride SiOXNY satisfies x> 0.50, preferably 0.50 <x <0.66, after step d), so as to passivate the interface, step d) being illustrated in FIG.
    [0024] Step a) advantageously comprises the steps of: b) forming the first dielectric layer 2 at the first surface 10 of the substrate 1, step b) being illustrated in FIG. 1d, c) forming the second dielectric layer 3 at the second surface 11 of the substrate 1, step c) being illustrated in FIG. 1c.
    [0025] In the embodiment illustrated in FIGS. 1a to 1g, step c) is performed before step b). However, steps b) and c) can be swapped. In other words, step b) can be executed before step c). In contrast, step d) is performed after steps b) and c). Step a) advantageously comprises a step a1) forming texturizing patterns on the first and second surfaces 10, 11 of the substrate 1, step a1) being illustrated in FIG. 1 b). Such texturing of the first and second surfaces 10, 11 of the substrate 1 allows a significant reduction of the reflection coefficient and optical losses in the photovoltaic cell.
    [0026] The first dielectric layer 2 formed during step b) advantageously has a thickness of between 3 nm and 100 nm, preferably between 20 nm and 35 nm. The boron atoms advantageously have an atomic proportion in the first dielectric layer 2 of between 10% and 50%, preferably between 10% and 30%, before stage d). The boron atoms advantageously have an atomic proportion in the first dielectric layer 2 of between 1% and 10%, preferably between 3% and 8%, after step d). The silicon oxynitride SiOXNY advantageously satisfies x <0.50 before step d). The silicon oxynitride SiOXNY advantageously satisfies 0 <y <0.10, preferably 0 <y <0.05, before step d), and preferably after step d). When the first dielectric layer 2 is made of a material based on a hydrogenated silicon oxynitride, step b) is advantageously carried out by a chemical vapor deposition (PECVD for Plasma-Enhanced Chemical Vapor Deposition in English language) from reactive gases comprising silane SiH4 and nitrous oxide N20. The boron atoms are advantageously incorporated into the hydrogenated silicon oxynitride by an injection of diborane B2H6 with the reactive gases.
    [0027] The second dielectric layer 3 formed during step c) advantageously has a thickness of between 10 nm and 50 nm, preferably between 10 nm and 30 nm. The phosphorus or arsenic atoms have an atomic proportion in the second dielectric layer 3 of between 1% and 10% before step d). The phosphorus or arsenic atoms advantageously have an atomic proportion in the second dielectric layer 3 of between 1% and 10%, preferably between 1% and 5%, after stage d). The second dielectric layer 3 formed during step c) is advantageously based on a silicon oxynitride SiOXNY 0 <x <y, preferably hydrogenated. The silicon oxynitride SiOXNY of the second dielectric layer 3 advantageously satisfies 0 <x <0.05 before and after step d). The silicon oxynitride SiOXNY of the second dielectric layer 3 advantageously satisfies 0.30 <y <0.55 before and after step d). When the second dielectric layer 3 is made of a material based on a hydrogenated silicon oxynitride, step c) is advantageously carried out by a chemical vapor deposition (PECVD for PlasmaEnhanced Chemical Vapor Deposition in English) from reactive gases comprising silane SiH4 and NH3. When the second dielectric layer 3 comprises phosphorus atoms, said atoms are advantageously incorporated into the hydrogenated silicon oxynitride by an injection of phosphine PH3 with the reactive gases. When the second dielectric layer 3 comprises arsenic atoms, said atoms are advantageously incorporated into the hydrogenated silicon oxynitride by an injection of arsine AsH3 with the reactive gases. The thermal annealing is applied during step d) under an oxidizing atmosphere adapted to enrich the first dielectric layer with oxygen. The thermal annealing applied in step d) is a global thermal annealing in the sense 10 where it is applied to the entire structure 1, 2, 3. It is therefore not a localized thermal annealing applied on part of the structure 1, 2, 3, for example using a laser. Step d) is advantageously carried out in an oven. The thermal annealing applied in step d) advantageously has: an annealing temperature value of between 850 ° C. and 950 ° C., preferably between 900 ° C. and 950 ° C., a duration value of annealing between 10 minutes and 1 hour, preferably between 30 minutes and 1 hour. Thermal annealing is advantageously applied in step d) at atmospheric pressure. The oxidizing atmosphere advantageously comprises a mixture of oxygen and a neutral gas selected from argon, nitrogen, or a mixture of argon and nitrogen.
    [0028] The method advantageously comprises the steps of: el) forming a first additional dielectric layer 20 on the first dielectric layer 2, e2) forming a second additional dielectric layer 30 on the second dielectric layer 3.
    [0029] Step e1) is performed after step d) so that the silicon oxynitride of the first dielectric layer 2 can be easily enriched with oxygen in step d) by the oxidizing atmosphere. As illustrated in FIG. 1c, step e2) and step c) are advantageously carried out simultaneously, the first and second dielectric layers 2, 3, the second additional dielectric layer 30 and the substrate 1 forming the structure to which thermal annealing is applied in step d). Thus, the number of process steps is reduced. The first and second additional dielectric layers 20, 30 are advantageously each based on a SiOXNY silicon oxynitride which satisfies 0 <x <y, preferably hydrogenated. As illustrated in FIG. 1g, the process advantageously comprises a step f) bringing each of the first and second semiconductor regions 100, 110 into contact with an electrode E. Step f) advantageously comprises a metallization step, preferably executed by silkscreen. Each electrode E is advantageously made of silver and / or aluminum.
    [0030] According to a first embodiment illustrated in FIG. 2, the substrate 1 provided during step a) is doped with n-type and the first surface 10 of substrate 1 is intended to be exposed to light radiation (symbolized by a double arrow in Figure 2) so as to form a standard n-type architecture. The first semiconductor zone 100 forms the emitter 20 while the second semiconductor zone 110, of the same type of doping as the substrate 1, is of BSF (acronym for "Back Surface Field" in English). According to a second embodiment illustrated in FIG. 3, the substrate 1 provided during step a) is doped with n-type and the second surface 11 of substrate 1 is intended to be exposed to a light radiation (symbolized by a double arrow in FIG. 3) so as to form an inverted transmitter type n architecture. The first semiconductor zone 100 forms the emitter. The second semiconductor zone 110, of the same type of doping as the substrate 1, is of FSF type (acronym for "Front Surface Field" in English). According to a third embodiment illustrated in FIG. 4, the substrate 1 provided during step a) is p-doped and the first surface 10 of substrate 15 is intended to be exposed to light radiation (symbolized by a double arrow in Figure 2) so as to form a p-type architecture with an inverted transmitter. The second semiconductor zone 110 forms the emitter. The first semiconductor zone 100, of the same type of doping as the substrate 1, 5 is of FSF (acronym for "Front Surface Field" in English). Step b) is advantageously performed before step c). According to a fourth embodiment illustrated in FIG. 5, the substrate 1 provided during step a) is p-type doped and the second surface 11 of substrate 1 is intended to be exposed to light radiation (symbolized by a double arrow in FIG. 3) so as to form a standard p-type architecture. The second semiconductor zone 110 forms the emitter while the first semiconductor zone 100, of the same type of doping as the substrate 1, is of BSF (acronym for "Back Surface Field" in English). Step b) is advantageously performed before step c). Embodiment example: The substrate 1 is based on n-type doped crystalline silicon. The substrate 1 has inverted pyramid patterns on the first and second surfaces 10, 11. The architecture is of type n with a standard emitter. The first semiconductor zone 100 forms the emitter. The second semiconductor surface 110 is of the BSF type. The first surface 10 is noted front face, and the second surface 11 is noted back side. A stack comprising the second dielectric layer 3 and the second additional dielectric layer 30 is deposited on the rear face by PECVD. The second dielectric layer 3 is a silicon oxynitride containing phosphorus atoms, denoted SiOxNy: P. The second additional dielectric layer 30 is a silicon nitride, denoted SiNx. Then the first dielectric layer 2 is deposited on the front face by PECVD. The first dielectric layer 2 is a silicon oxynitride having boron atoms, denoted SiOxNy: B. The thermal annealing applied in step d) has an annealing temperature value of 940 ° C, and an annealing time value of 35 minutes.
    [0031] Then the first additional layer 20 is deposited by PECVD on the front panel after step d). The first additional dielectric layer 20 is a silicon nitride, denoted SiNX. Then the first and second semiconductor regions 100, 110 are contacted with an electrode E by screen printing. The yield of the photovoltaic cell obtained is 19.2% on average, 19.4% peak. XPS measurements were made to determine the atomic proportion in the dielectric layers before and after the thermal annealing applied in step d). These measurements are collated in the table below. Before step d) After step d) SiOxNy dielectric layers: B SiNX SiOxNy: B SiNX (2, 20) Proportion Si (%) 20 45 25-30 40-45 Proportion N (%) <5 50-55 0 50-55 Proportion O (%) 20-55 <5 60-65 0 Proportion B (%) 20 <5 3-8 <5 Before step d) After step d) SiOxNy dielectric layers: P SiNX SiOxNy : P SiNX (3, 30) Proportion If (%) 45-55 45 45-55 45 Proportion N (%) <50 50-55 <50 50-55 Proportion O (%) <5 0 <5 0 Proportion P ( %) <5 0 <5 0 15
    权利要求:
    Claims (25)
    [0001]
    REVENDICATIONS1. A method of manufacturing a photovoltaic cell, comprising the steps of: a) providing a structure (1, 2, 3) comprising: - a substrate (1) made of a semiconductor material based on crystalline silicon, and comprising a first surface (10) and a second opposite surface (11); a first dielectric layer (2) formed at the first surface (10) of the substrate (1), and comprising boron atoms, the first dielectric layer (2) being based on a silicon oxynitride SiOXNY satisfying 0 <y <x, preferably hydrogenated; a second dielectric layer (3) formed at the second surface (11) of the substrate (1), and comprising phosphorus or arsenic atoms; d) thermally annealing the structure (1, 2, 3) under an oxidizing atmosphere, said thermal annealing being adapted to: - form a first semiconductor region (100) for contacting an electrode (E ), the first semiconductor region (100) being formed by diffusion of the boron atoms in the substrate (1) from the first dielectric layer (2) to the first surface (10) of the substrate (1), the first semiconductor region (100) and the first dielectric layer (2) having an interface; forming a second semiconductor zone (110) intended to be in contact with an electrode (E), the second semiconductor zone (110) being formed by diffusion of the phosphorus or arsenic atoms into the substrate (1); ) from the second dielectric layer (3) to the second surface (11) of the substrate (1); - enriching the first dielectric layer (2) with oxygen so that the silicon oxynitride SiOXNY verifies x> 0.50, preferably 0.50 <x <0.66, after step d), so as to passivate the interface. 30
    [0002]
    2. Method according to claim 1, characterized in that the boron atoms have an atomic proportion in the first dielectric layer (2) of between 10% and 50%, preferably between 10% and 30%, before the stage d). 3035740 18
    [0003]
    3. Method according to claim 1 or 2, characterized in that the boron atoms have an atomic proportion in the first dielectric layer (2) of between 1% and 10%, preferably between 3% and 8%, after step d). 5
    [0004]
    4. Method according to one of claims 1 to 3, characterized in that the silicon oxynitride SiOXNY checks x <0.50 before step d).
    [0005]
    5. Method according to one of claims 1 to 4, characterized in that the silicon oxynitride SiOXNY satisfies 0 <y <0.10, preferably 0 <y <0.05, before step d), and preferably after step d).
    [0006]
    6. Method according to one of claims 1 to 5, characterized in that the oxidizing atmosphere comprises a mixture of oxygen and a neutral gas selected from argon, nitrogen, or a mixture of argon and water. 'nitrogen.
    [0007]
    7. Method according to one of claims 1 to 6, characterized in that the thermal annealing applied in step d) has: an annealing temperature value between 850 ° C and 950 ° C, preferably between 900 ° C and 950 ° C, - a value of annealing time of between 10 minutes and 1 hour, preferably between 30 minutes and 1 hour.
    [0008]
    8. Process according to one of Claims 1 to 7, characterized in that the phosphorus or arsenic atoms have an atomic proportion in the second dielectric layer (3) of between 1% and 10% before step d).
    [0009]
    9. Process according to one of Claims 1 to 8, characterized in that the phosphorus or arsenic atoms have an atomic proportion in the second dielectric layer (3) of between 1% and 10%, preferably between 1% and 5%, after step d). 3035740 19
    [0010]
    10. Method according to one of claims 1 to 9, characterized in that the second dielectric layer (3) is based on a silicon oxynitride SiOXNY 0 <x <y, preferably hydrogenated. 5
    [0011]
    11. The method of claim 10, characterized in that the silicon oxynitride SiOXNY of the second dielectric layer (3) checks 0 <x <0.05 before and after step d).
    [0012]
    12. The method of claim 10 or 11, characterized in that the silicon oxynitride SiOXNY of the second dielectric layer (3) verifies 0.30 <y <0.55 before and after step d).
    [0013]
    13. Method according to one of claims 1 to 12, characterized in that it comprises the steps: 15 el) forming a first additional dielectric layer (20) on the first dielectric layer (2), the step el) being performed after step d), e2) forming a second additional dielectric layer (30) on the second dielectric layer (3), the first and second additional dielectric layers (20, 30) being each based on a silicon oxynitride SiOXNY satisfying 0 <x <y, preferably hydrogenated.
    [0014]
    14. Method according to one of claims 1 to 13, characterized in that the substrate (1) provided in step a) is doped n or p type, and in that the first surface (10) or the second surface (11) of the substrate (1) is intended to be exposed to light radiation.
    [0015]
    Photovoltaic cell comprising: a substrate (1) of semiconductor material based on crystalline silicon, and having a first surface (10) and an opposite second surface (11); first and second semiconductor zones (100, 110) respectively extending under the first surface (10) and under the second surface (11) of the substrate (1), the first semiconductor zone (100) comprising boron atoms, the second semiconductor zone (110) having phosphorus or arsenic atoms; a first layer (2) of a dielectric material formed at the first surface (10) of the substrate (1), the dielectric material being based on a silicon oxynitride SiOXNY satisfying 0 <y <x, with x> 0.50, preferably 0.50 <x <0.66, the dielectric material of the first layer (2) having boron atoms and preferably hydrogen; a second layer (3) of a dielectric material formed at the second surface (11) of the substrate (1), the dielectric material of the second layer (3) comprising phosphorus or arsenic atoms.
    [0016]
    16. Photovoltaic cell according to claim 15, characterized in that the silicon oxynitride SiOXNY satisfies 0 <y <0.10, preferably 0 <y <0.05. 15
    [0017]
    17. Photovoltaic cell according to claim 15 or 16, characterized in that the boron atoms have an atomic proportion in the dielectric material of the first layer (2) of between 1% and 10%, preferably between 3% and 8%. %. 20
    [0018]
    18. Photovoltaic cell according to one of claims 15 to 17, characterized in that the dielectric material of the second layer (3) is based on a silicon oxynitride SiOXNY satisfying 0 <x <y, and preferably comprises hydrogen. 25
    [0019]
    19. Photovoltaic cell according to claim 18, characterized in that the silicon oxynitride SiOXNY of the second layer (3) satisfies 0 <x <0.05.
    [0020]
    20. Photovoltaic cell according to claim 18 or 19, characterized in that the silicon oxynitride SiOXNY of the second layer (3) verifies 0.30 <y <0.55.
    [0021]
    21. Photovoltaic cell according to one of claims 15 to 20, characterized in that the phosphorus or arsenic atoms have an atomic proportion 3035740 21 in the dielectric material of the second layer (3) between 1% and 10% preferably between 1% and 5%.
    [0022]
    22. Photovoltaic cell according to one of claims 15 to 21, characterized in that it comprises first and second additional dielectric layers (20, 30) formed respectively on the first and second dielectric layers (2, 3), and in that the first and second additional dielectric layers (20, 30) are preferably each based on a SiOXNY silicon oxynitride which satisfies 0 <x <y, preferably hydrogenated. 10
    [0023]
    23. Photovoltaic cell according to one of claims 15 to 22, characterized in that the first layer (2) has a thickness between 3 nm and 100 nm, preferably between 20 nm and 35 nm. 15
    [0024]
    Photovoltaic cell according to one of Claims 15 to 23, characterized in that the substrate (1) is doped with n or p type, and in that the first surface (10) or the second surface (11) of the substrate (1) is intended to be exposed to light radiation. 20
    [0025]
    Photovoltaic cell obtainable by a method according to one of claims 1 to 14.
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    同族专利:
    公开号 | 公开日
    WO2016174351A1|2016-11-03|
    EP3289616A1|2018-03-07|
    FR3035740B1|2017-05-12|
    TW201701492A|2017-01-01|
    EP3289616B1|2022-03-02|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US2794846A|1955-06-28|1957-06-04|Bell Telephone Labor Inc|Fabrication of semiconductor devices|
    US4152824A|1977-12-30|1979-05-08|Mobil Tyco Solar Energy Corporation|Manufacture of solar cells|
    US20110177652A1|2010-01-20|2011-07-21|Varian Semiconductor Equipment Associates, Inc.|Bifacial solar cell using ion implantation|
    DE102013211746A1|2013-06-21|2014-12-24|Robert Bosch Gmbh|Process for producing a solar cell|WO2021037846A1|2019-08-29|2021-03-04|Commissariat à l'Energie Atomique et aux Energies Alternatives|Method for manufacturing a photovoltaic cell|US6998288B1|2003-10-03|2006-02-14|Sunpower Corporation|Use of doped silicon dioxide in the fabrication of solar cells|FR3059463B1|2016-11-30|2018-12-07|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PASSIVATION STRUCTURE AND METHOD.|
    CN108470798B|2018-05-04|2020-07-07|润峰电力有限公司|Oxygen-containing diffusion method for crystalline silicon battery piece|
    法律状态:
    2016-04-28| PLFP| Fee payment|Year of fee payment: 2 |
    2016-11-04| PLSC| Publication of the preliminary search report|Effective date: 20161104 |
    2017-04-28| PLFP| Fee payment|Year of fee payment: 3 |
    2018-04-26| PLFP| Fee payment|Year of fee payment: 4 |
    2019-04-29| PLFP| Fee payment|Year of fee payment: 5 |
    2020-04-30| PLFP| Fee payment|Year of fee payment: 6 |
    2021-04-29| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1553834A|FR3035740B1|2015-04-28|2015-04-28|PROCESS FOR PRODUCING A PHOTOVOLTAIC CELL|FR1553834A| FR3035740B1|2015-04-28|2015-04-28|PROCESS FOR PRODUCING A PHOTOVOLTAIC CELL|
    PCT/FR2016/050989| WO2016174351A1|2015-04-28|2016-04-27|Method for manufacturing a photovoltaic cell|
    EP16726125.4A| EP3289616B1|2015-04-28|2016-04-27|Photovoltaic cell and its fabrication method|
    TW105113252A| TW201701492A|2015-04-28|2016-04-28|Photovoltaic cell manufacturing method|
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